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Description
IXYS SEMICONDUCTOR IXFN200N10P MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7.5 mohm, 15 V, 5 VThe IXFN200N10P is a N channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated. Fast intrinsic rectifier Rugged polysilicon gate cell structure Encapsulating epoxy meets UL94V 0, flammability classification Rugged polysilicon gate cell structure Easy to mount High power density Space savings Applications
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
Applications
Power Management, Lighting
Product details
| Power Dissipation Pd | 680W |
| Operating Temperature Max | 175�C |
| Continuous Drain Current Id | 200A |
| Transistor Polarity | N Channel |
| No. of Pins | 4Pins |
| Threshold Voltage Vgs | 5V |
| Product Range | Polar(TM) HiPerFET |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 100V |
| Rds(on) Test Voltage Vgs | 15V |
| Transistor Case Style | ISOTOP |
| On Resistance Rds(on) | 0.0075ohm |
| MSL | - |
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | IXFN200N10P |
| Quantity | Each |
| Technical Data Sheet EN |
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Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
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